NVC6S5A354PLZT1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NVC6S5A354PLZT1G
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Terminal Finish: TIN BISMUTH; Package Body Material: PLASTIC/EPOXY;
Datasheet	NVC6S5A354PLZT1G Datasheet
In Stock	1,690

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3 A
Surface Mount:	YES
Terminal Finish:	TIN BISMUTH
No. of Terminals:	6
Maximum Power Dissipation (Abs):	1.9 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.1 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	2156-NVC6S5A354PLZT1G-OS 2832-NVC6S5A354PLZT1GTR NVC6S5A354PLZT1GOSDKR ONSONSNVC6S5A354PLZT1G NVC6S5A354PLZT1GOSTR NVC6S5A354PLZT1G-ND NVC6S5A354PLZT1GOSCT
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e6
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,690	$0.187	$316.030

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