NVD5C648NLT4G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NVD5C648NLT4G
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 72 W; Minimum DS Breakdown Voltage: 60 V; Peak Reflow Temperature (C): 260;
Datasheet	NVD5C648NLT4G Datasheet
In Stock	2,021

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	89 A
Maximum Pulsed Drain Current (IDM):	510 A
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	2
Maximum Power Dissipation (Abs):	72 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0057 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	223 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	89 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,021	$1.480	$2,991.080

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