NXH160T120L2Q1PG by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NXH160T120L2Q1PG
Description	N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Maximum Collector Current (IC): 140 A; No. of Elements: 4;
Datasheet	NXH160T120L2Q1PG Datasheet
In Stock	2,154

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	140 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.9 V
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
No. of Terminals:	30
Maximum Power Dissipation (Abs):	280 W
Maximum Collector-Emitter Voltage:	1200 V
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X30
No. of Elements:	4
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.5 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,154	-	-

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