NXH350N100H4Q2F2SG by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NXH350N100H4Q2F2SG
Description	N-CHANNEL; Configuration: 2 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 592 W; Maximum Collector Current (IC): 329 A; Nominal Turn On Time (ton): 114 ns;
Datasheet	NXH350N100H4Q2F2SG Datasheet
In Stock	963

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	329 A
Configuration:	2 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	5.7 V
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	572.5 ns
No. of Terminals:	42
Maximum Power Dissipation (Abs):	592 W
Maximum Collector-Emitter Voltage:	1000 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	114 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X42
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	125 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Maximum VCEsat:	1.8 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
963	-	-

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