NXH35C120L2C2S1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NXH35C120L2C2S1G
Description	N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 35 A; JESD-30 Code: R-PDIP-T26; Case Connection: ISOLATED;
Datasheet	NXH35C120L2C2S1G Datasheet
In Stock	2,255

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	35 A
Configuration:	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.8 V
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	485 ns
No. of Terminals:	26
Maximum Collector-Emitter Voltage:	1200 V
Terminal Position:	DUAL
Nominal Turn On Time (ton):	240 ns
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PDIP-T26
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Maximum VCEsat:	2.4 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,255	$35.000	$78,925.000

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