Onsemi - SGP13N60UFDTU

  1. Home
  2. Onsemi - SGP13N60UFDTU
SGP13N60UFDTU by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number SGP13N60UFDTU
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 13 A; Package Style (Meter): FLANGE MOUNT; Terminal Form: THROUGH-HOLE;
Datasheet SGP13N60UFDTU Datasheet
In Stock1,109
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 13 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: MOTOR CONTROL
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Nominal Turn Off Time (toff): 253 ns
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: SINGLE
Nominal Turn On Time (ton): 62 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Additional Features: LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Maximum Operating Temperature: 150 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,109 $0.850 $942.650

Popular Products

Category Top Products

IRGP4066D-EPBF by Infineon Technologies

IRGP4066D-EPBF

Infineon Technologies

IRGP4066D-EPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 140A max collector current. It has a power dissipation of 454W, making it ideal for power control applications. With a rise time of 90ns and fall time of 80ns, it offers efficient switching performance in a rectangular package style.
APT85GR120B2 by Microsemi

APT85GR120B2

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 962 W; Maximum Collector Current (IC): 170 A; Terminal Position: SINGLE;
NXH50C120L2C2ES1G by Onsemi

NXH50C120L2C2ES1G

Onsemi

NXH50C120L2C2ES1G by Onsemi is an IGBT transistor with 6 elements in a bridge configuration. It has a max VCEsat of 2.4V and can handle up to 50A of collector current. Ideal for power control applications, it operates b/w -40°C to 150°C temperature range.
STGWA50IH65DF by STMicroelectronics

STGWA50IH65DF

STMicroelectronics

STGWA50IH65DF by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2V and a max collector-emitter voltage of 650V. It is commonly used in applications requiring high power dissipation, such as industrial motor drives and power supplies.
HGTG20N60B3D by Harris Semiconductor

HGTG20N60B3D

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Maximum Collector Current (IC): 40 A; No. of Terminals: 3;
IXXH75N60C3 by IXYS Corporation

IXXH75N60C3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 150 A; Case Connection: COLLECTOR;
FP100R06KE3 by Infineon Technologies

FP100R06KE3

Infineon Technologies

FP100R06KE3 by Infineon Technologies is an N-CHANNEL IGBT with 600V VCEsat, 100A IC, and 1.9V VCEsat. Its complex configuration makes it suitable for high-power applications like motor drives and inverters due to its 335W power dissipation capability.
IKY75N120CS6XKSA1 by Infineon Technologies

IKY75N120CS6XKSA1

Infineon Technologies

IKY75N120CS6XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCEsat, 150A IC, and 880W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 331ns and built-in diode configuration. Operates b/w -40°C to 175°C temperature range.
APT100GN60B2G by Advanced Power Technology

APT100GN60B2G

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 229 A; JESD-30 Code: R-PSIP-T3; Maximum Collector-Emitter Voltage: 600 V;
FS400R07A1E3_H5 by Infineon Technologies

FS400R07A1E3_H5

Infineon Technologies

Infineon FS400R07A1E3_H5 IGBT, N-CHANNEL, 650V VCEsat, 500A IC, for POWER CONTROL apps. Features 750W Pdiss, -40 to 150°C temp range, with ton of 200ns and toff of 580ns.
APT100GN60LDQ4G by Microsemi

APT100GN60LDQ4G

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 229 A; Package Shape: RECTANGULAR;
FF225R12ME4BOSA1 by Infineon Technologies

FF225R12ME4BOSA1

Infineon Technologies

FF225R12ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max voltage of 1200V, current of 320A, and turn-off time of 600ns. Ideal for applications requiring high power efficiency in industrial systems.
APT100GN60LDQ4G by Advanced Power Technology

APT100GN60LDQ4G

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 229 A; JESD-30 Code: R-PSFM-T3; Nominal Turn Off Time (toff): 435 ns;
HGTG11N120CND by Intersil

HGTG11N120CND

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 43 A; Maximum Fall Time (tf): 400 ns;
CM1000E3U-34NF by Powerex

CM1000E3U-34NF

Powerex

Powerex CM1000E3U-34NF is an N-CHANNEL IGBT with 1700V VCE, 1000A IC, and 150°C max temp. Ideal for power control applications due to its single configuration with built-in diode and flange mount package style.
CM200TX-24T by Mitsubishi Electric

CM200TX-24T

Mitsubishi Electric

Mitsubishi Electric's CM200TX-24T is an N-CHANNEL IGBT with 1200V VCEsat, 200A IC, and 1040W power dissipation. Ideal for POWER CONTROL applications, it features a complex configuration in a rectangular package with 35 terminals. Operating b/w -40 to 150 °C, it offers fast rise/fall times of 200/500 ns.
IXYT25N250CHV by IXYS Corporation

IXYT25N250CHV

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 937 W; Maximum Collector Current (IC): 95 A; JESD-30 Code: R-PSSO-G2;
HGTP10N120BN by Intersil

HGTP10N120BN

Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 198 W; Maximum Collector Current (IC): 35 A; Terminal Finish: Tin/Lead (Sn/Pb);
HGTG40N60C3 by Fairchild Semiconductor

HGTG40N60C3

Fairchild Semiconductor

HGTG40N60C3 by Fairchild Semiconductor is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 75A max collector current, and 291W max power dissipation. Ideal for motor control applications due to its fast turn-off time of 460ns and high operating temperature of 150°C.
HGTG12N60A4D by Fairchild Semiconductor

HGTG12N60A4D

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 54 A; Package Shape: RECTANGULAR;