SNXH100M95H3Q2F2PG by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	SNXH100M95H3Q2F2PG
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 457 W; Maximum Collector Current (IC): 263 A; Maximum Collector-Emitter Voltage: 950 V;
Datasheet	SNXH100M95H3Q2F2PG Datasheet
In Stock	1,231

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	263 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	77 ns
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	5.7 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	1665 ns
No. of Terminals:	40
Maximum Power Dissipation (Abs):	457 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	306 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X40
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Fall Time (tf):	264 ns
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	950 V
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.25 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,231	-	-

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