Osram Opto Semiconductors - SFH3410R

  1. Home
  2. Osram Opto Semiconductors - SFH3410R
SFH3410R by Osram Opto Semiconductors

Image shown is a representation only.

Manufacturer Osram Opto Semiconductors
Manufacturer's Part Number SFH3410R
Description PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 50 nA; Shape: SQUARE; Minimum Operating Temperature: -40 Cel; Infrared (IR) Range: NO;
Datasheet SFH3410R Datasheet
NAME DESCRIPTION
Other Names: SFH 3410R-ND
475-SFH3410RDKR-ND
SFH3410R
475-SFH3410RCT
SFH3410R-ND
475-SFH3410RDKR
475-SFH3410RCT-ND
Q65111A9395
475-SFH3410RTR-ND
4991-SFH3410RCT
4991-SFH3410RDKR
4991-SFH3410RDKR-ND
4991-SFH3410RTR-ND
4991-SFH3410RTR
4991-SFH3410RCT-ND
475-SFH3410RTR
Maximum Dark Current: 50 nA
Shape: SQUARE
Configuration: SINGLE
Packing Method: TR, 7 INCH
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
Maximum On State Current: .02 A
No. of Functions: 1
Infrared (IR) Range: NO
Optoelectronic Type: PHOTO TRANSISTOR
Peak Wavelength (nm): 570
Additional Features: AEC-Q102
Maximum Operating Temperature: 100 Cel
Minimum Collector-emitter Breakdown Voltage: 5.5 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SFH309FA-3 by Infineon Technologies

SFH309FA-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 900; Maximum Response Time: .000006 s; JESD-609 Code: e0;
TPS621(A,F) by Toshiba

TPS621(A,F)

Toshiba

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .05 A; Peak Wavelength (nm): 820; Minimum Operating Temperature: -25 Cel; Maximum Power Dissipation: .075 W;
BPX81-3 by Infineon Technologies

BPX81-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 850; Maximum Operating Temperature: 85 Cel; Maximum Response Time: .000006 s; Maximum Dark Current: 200 nA;
SFH309FA2 by Infineon Technologies

SFH309FA2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000005 s; Peak Wavelength (nm): 900; Maximum On State Current: .015 A;
TPS611 by Toshiba

TPS611

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .05 A; Additional Features: HIGH SENSITIVITY; Maximum Dark Current: 100 nA; Configuration: SINGLE;
TEFT4300 by Temic Semiconductors

TEFT4300

Temic Semiconductors

PHOTO TRANSISTOR; Size: 3 mm; Configuration: SINGLE; Shape: ROUND; Infrared (IR) Range: YES; Maximum Dark Current: 200 nA;
TPS612-BC by Toshiba

TPS612-BC

Toshiba

PHOTO TRANSISTOR; Infrared (IR) Range: YES; Maximum Operating Temperature: 75 Cel; Size: 3 mm; Shape: ROUND; Configuration: SINGLE;
TIL99 by Texas Instruments

TIL99

Texas Instruments

TIL99 by Texas Instruments is a phototransistor with max temp of 125°C and min temp of -60°C. It has a max power dissipation of 0.25W, on-state current of 0.05A, and response time of 8μs. Ideal for applications requiring precise light detection in harsh environments.
SFH302-2 by Infineon Technologies

SFH302-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; JESD-609 Code: e0; Maximum Dark Current: 200 nA;
ASDL-6270-D22 by Broadcom

ASDL-6270-D22

Broadcom

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Infrared (IR) Range: YES; No. of Functions: 1; Configuration: SINGLE; JESD-609 Code: e3;
TIL609 by Texas Instruments

TIL609

Texas Instruments

TIL609 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.05W. With response time of 0.000008s and dark current of 25nA, it's ideal for applications requiring precise light detection in various environments.
BPY62 by Infineon Technologies

BPY62

Infineon Technologies

Infineon's BPY62 phototransistor operates b/w -55°C to 125°C with peak wavelength of 850nm. It has a max power dissipation of 0.2W and can handle on-state current up to 0.1A. Ideal for applications requiring through-hole mounting, such as light sensing in industrial automation systems.
SFH3710-3/4-Z by Osram Opto Semiconductors

SFH3710-3/4-Z

Osram Opto Semiconductors

Osram Opto Semiconductors SFH3710-3/4-Z is a single phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 85°C, producing nominal light current of 0.35mA and max dark current of 50nA. Ideal for applications requiring square shape optoelectronic components in compact 0.29mm size.
QSD123A4R0 by Onsemi

QSD123A4R0

Onsemi

QSD123A4R0 by Onsemi is a 5mm round phototransistor with peak wavelength of 880nm. It operates b/w -40°C to 100°C, has max power dissipation of 0.1W, and collector-emitter breakdown voltage of 30V. Ideal for IR applications due to its optoelectronic type as a photo transistor.
PH5503A2NA1-Y-A by Renesas Electronics

PH5503A2NA1-Y-A

Renesas Electronics

Photo Transistors;
PH107 by Renesas Electronics

PH107

Renesas Electronics

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; JESD-609 Code: e0; Maximum Dark Current: 400 nA;
SFH325 by Infineon Technologies

SFH325

Infineon Technologies

SFH325 by Infineon Technologies is a single phototransistor with peak wavelength of 860nm. It operates b/w -40 to 100°C, has Tin/Lead terminal finish, and can handle max power dissipation of 0.165W. Ideal for applications requiring IR detection in compact spaces due to its small size of 2.4mm and surface mounting feature.
SFH309 by Infineon Technologies

SFH309

Infineon Technologies

SFH309 by Infineon Technologies is a phototransistor with a peak wavelength of 860nm. It has a max operating temperature of 100°C and a min operating temperature of -55°C. This through-hole mount device is commonly used in applications requiring low dark current and a max on-state current of 0.015A.
LS602 by Texas Instruments

LS602

Texas Instruments

LS602 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, with max power dissipation of 0.05W. Ideal for applications requiring fast response time and IR detection in through-hole mounting configurations.
SFH309FA by Siemens

SFH309FA

Siemens

PHOTO TRANSISTOR; Infrared (IR) Range: YES; Peak Wavelength (nm): 900; Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 200 nA; Size: 3 mm;