Texas Instruments - TIL602

  1. Home
  2. Texas Instruments - TIL602
TIL602 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number TIL602
Description PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Configuration: SINGLE; Maximum Dark Current: 25 nA; Peak Wavelength (nm): 900; Minimum Operating Temperature: -60 Cel;
Datasheet TIL602 Datasheet
In Stock1,025
NAME DESCRIPTION
Maximum Dark Current: 25 nA
Shape: ROUND
Configuration: SINGLE
Sub-Category: Photo Transistors
Minimum Operating Temperature: -60 Cel
Mounting Feature: THROUGH HOLE MOUNT
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PHOTO TRANSISTOR
Nominal Light Current: 2 mA
Peak Wavelength (nm): 900
Maximum Power Dissipation: .05 W
Additional Features: TTL COMPATIBLE
Maximum Response Time: .000008 s
Maximum Operating Temperature: 125 Cel
Minimum Collector-emitter Breakdown Voltage: 50 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,025 - -

Popular Products

Category Top Products

1N4378 by Texas Instruments

1N4378

Texas Instruments

1N4378 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. With response time of 0.000002s, it's ideal for applications requiring precise light detection in various environments.
SPS235C by Onsemi

SPS235C

Onsemi

The Onsemi SPS235C is a PHOTO DARLINGTON phototransistor with peak wavelength of 850nm. It operates b/w -25 °C to 80°C, has max power dissipation of 0.05W, and response time of 0.00003s. Ideal for applications requiring through hole mounting, it can handle max on state current of 0.03A and dark current up to 1000nA.
SFH309PFA3 by Infineon Technologies

SFH309PFA3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .015 A; Maximum Response Time: .000006 s; Minimum Operating Temperature: -55 Cel;
PH102 by Renesas Electronics

PH102

Renesas Electronics

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Additional Features: HIGH SENSITIVITY; Nominal Light Current: .18 mA; Size: 3.8 mm;
L14R1 by Renesas Electronics

L14R1

Renesas Electronics

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Maximum Power Dissipation: .15 W; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 100 Cel;
HLPT-B5D0-00000 by Broadcom

HLPT-B5D0-00000

Broadcom

PHOTO TRANSISTOR;
QSC114 by Onsemi

QSC114

Onsemi

QSC114 by Onsemi is a 3mm phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, has response time of 0.000007s, and can handle up to 0.1W power dissipation. Ideal for applications requiring IR detection in through-hole mounting configurations.
SFH310FA-3 by Infineon Technologies

SFH310FA-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Peak Wavelength (nm): 880; Maximum Response Time: .000008 s;
OP802WSL by Optek Technology

OP802WSL

Optek Technology

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Shape: ROUND; Size: 4.65 mm; Infrared (IR) Range: YES;
TPS605-A by Toshiba

TPS605-A

Toshiba

PHOTO DARLINGTON; Maximum Dark Current: 250 nA; Configuration: SINGLE; No. of Functions: 1; Minimum Operating Temperature: 0 Cel; Shape: ROUND;
PH110 by Nec Electronics America

PH110

Nec Electronics America

PHOTO TRANSISTOR; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Light Current: .4 mA; Maximum Dark Current: 100 nA; Infrared (IR) Range: YES; JESD-609 Code: e0;
SDP8405-003 by Micro Switch

SDP8405-003

Micro Switch

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .07 W; Maximum Operating Temperature: 100 Cel; Maximum Response Time: .000015 s;
TPS604 by Toshiba

TPS604

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); No. of Functions: 1; Shape: ROUND; Maximum Dark Current: 200 nA;
SFH309FA-3 by Infineon Technologies

SFH309FA-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 900; Maximum Response Time: .000006 s; JESD-609 Code: e0;
TPS616(A,F) by Toshiba

TPS616(A,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Nominal Light Current: .01 mA; No. of Functions: 1; Infrared (IR) Range: YES; Maximum Operating Temperature: 85 Cel;
LPD80A by Infineon Technologies

LPD80A

Infineon Technologies

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 100 nA; Minimum Operating Temperature: -40 Cel; JESD-609 Code: e0;
SFH309PFA4 by Infineon Technologies

SFH309PFA4

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Response Time: .000007 s; Maximum On State Current: .015 A;
BP103BF4 by Infineon Technologies

BP103BF4

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Maximum Dark Current: 100 nA; Maximum On State Current: .05 A;
TPS606 by Toshiba

TPS606

Toshiba

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .0002 s; Infrared (IR) Range: NO; Peak Wavelength (nm): 720;
TPS615(A,F) by Toshiba

TPS615(A,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 3.1 mm; Nominal Light Current: .02 mA; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum On State Current: .02 A;