Renesas Electronics - GN4014ZB4LD

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GN4014ZB4LD by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number GN4014ZB4LD
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 14 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 370 V;
Datasheet GN4014ZB4LD Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 14 A
Maximum Power Dissipation (Abs): 60 W
Maximum Collector-Emitter Voltage: 370 V
Maximum Gate-Emitter Threshold Voltage: 2.2 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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