Renesas Electronics - GN4014ZB4LD

GN4014ZB4LD by Renesas Electronics

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	GN4014ZB4LD
Description	N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 14 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 370 V;
Datasheet	GN4014ZB4LD Datasheet

GN4014ZB4LD Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	14 A
Maximum Power Dissipation (Abs):	60 W
Maximum Collector-Emitter Voltage:	370 V
Maximum Gate-Emitter Threshold Voltage:	2.2 V
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO

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