Renesas Electronics - GN6010A

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GN6010A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number GN6010A
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A; Maximum Rise Time (tr): 300 ns; Maximum Collector-Emitter Voltage: 600 V;
Datasheet GN6010A Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 10 A
Maximum Power Dissipation (Abs): 50 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Rise Time (tr): 300 ns
Maximum Gate-Emitter Threshold Voltage: 5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Maximum Fall Time (tf): 350 ns
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