Renesas Electronics - GN6030C

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GN6030C by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number GN6030C
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 30 A; Package Style (Meter): IN-LINE;
Datasheet GN6030C Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 30 A
Configuration: SINGLE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 400 ns
Transistor Application: GENERAL PURPOSE SWITCHING
Maximum Gate-Emitter Threshold Voltage: 5 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 400 ns
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 150 W
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Maximum Fall Time (tf): 400 ns
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