Renesas Electronics - HAT2022REL

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HAT2022REL by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number HAT2022REL
Description N-CHANNEL; Surface Mount: YES; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 30 V;
Datasheet HAT2022REL Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 11 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .025 ohm
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