Renesas Electronics - NE004200-6

  1. Home
  2. Renesas Electronics - NE004200-6
NE004200-6 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NE004200-6
Description RF Power Field-Effect Transistors;
Datasheet NE004200-6 Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

A2T08VD020NT1 by NXP Semiconductors

A2T08VD020NT1

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Terminal Finish: TIN; Case Connection: SOURCE; Moisture Sensitivity Level (MSL): 3;
A2T27S020GNR1 by NXP Semiconductors

A2T27S020GNR1

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
BLM6G22-30G,118 by Ampleon Netherlands B V

BLM6G22-30G,118

Ampleon Netherlands B V

RF Power Field-Effect Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 245; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30;
BLF6G20LS-110 by NXP Semiconductors

BLF6G20LS-110

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 29 A;
SD2941-10W by STMicroelectronics

SD2941-10W

STMicroelectronics

SD2941-10W by STMicroelectronics is an N-channel RF Power FET with a max drain current of 20A and power dissipation of 389W. It operates at up to 200°C, making it suitable for high-power applications in industries like telecommunications and broadcasting.
AFT05MS004NT1 by Freescale Semiconductor

AFT05MS004NT1

Freescale Semiconductor

RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
CGHV1F006S by Wolfspeed

CGHV1F006S

Wolfspeed

CGHV1F006S by Wolfspeed is an N-CHANNEL RF Power FET with a 100V DS Breakdown Voltage. Ideal for KU BAND applications, it features Gallium Nitride technology, 0.95A Drain Current, and operates in DEPLETION MODE. This SMALL OUTLINE transistor has 12 terminals and is suitable for AMPLIFIER use.
MRF184 by Motorola

MRF184

Motorola

MRF184 by Motorola is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 11.5 dB Power Gain, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a CERAMIC, METAL-SEALED COFIRED package and can handle up to 7A Drain Current with a max power dissipation of 118W at 200°C.
934064594118 by NXP Semiconductors

934064594118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; No. of Elements: 1; Transistor Element Material: SILICON;
MRFE6VS25GNR1 by NXP Semiconductors

MRFE6VS25GNR1

NXP Semiconductors

NXP Semiconductors' MRFE6VS25GNR1 is a single N-channel RF Power FET with 24.5 dB power gain, operating in the ultra-high frequency band. It features a min DS breakdown voltage of 133 V and can handle up to 25 W power dissipation. Ideal for applications requiring high-power amplification in the RF domain.
SD2951-10 by STMicroelectronics

SD2951-10

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
BLF861A by Asi Semiconductor

BLF861A

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 318 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDFM-F4;
934065695112 by NXP Semiconductors

934065695112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Transistor Element Material: SILICON; No. of Terminals: 4;
2SK3075(TE12L,Q) by Toshiba

2SK3075(TE12L,Q)

Toshiba

RF Power Field-Effect Transistors;
STAC4932F1MR by STMicroelectronics

STAC4932F1MR

STMicroelectronics

RF Power Field-Effect Transistors;
PD57006-E by STMicroelectronics

PD57006-E

STMicroelectronics

PD57006-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology with a max temp of 150 °C.
MRF176GU by M/a-com Technology Solutions

MRF176GU

M/a-com Technology Solutions

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 400 W; Package Style (Meter): FLANGE MOUNT; Transistor Application: AMPLIFIER;
SD2931 by STMicroelectronics

SD2931

STMicroelectronics

SD2931 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 20 A, a breakdown voltage of 125 V, and can dissipate up to 292 W. Ideal for high-performance amplification in communication systems.
BLF246B,112 by NXP Semiconductors

BLF246B,112

NXP Semiconductors

NXP Semiconductors BLF246B,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 14dB Power Gain. Ideal for amplifier applications in the VHF band, it features a max power dissipation of 130W and operates in enhancement mode up to 200°C.
PD54003L-E by STMicroelectronics

PD54003L-E

STMicroelectronics

STMicroelectronics PD54003L-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage, suitable for AMPLIFIER applications. Operating in ENHANCEMENT MODE, it offers 4A Drain Current and 19.5W Power Dissipation at 150°C max temp in ULTRA HIGH FREQUENCY BAND. Package: PLASTIC/EPOXY CHIP CARRIER with SOURCE connection.