NE25337 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NE25337
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Minimum Power Gain (Gp): 16 dB; Package Body Material: PLASTIC/EPOXY;
Datasheet	NE25337 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	GALLIUM ARSENIDE
Field Effect Transistor Technology:	METAL SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.08 A
Surface Mount:	YES
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	4
Terminal Position:	RADIAL
Package Style (Meter):	DISK BUTTON
JESD-30 Code:	O-PRDB-F4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	FLAT
Operating Mode:	DUAL GATE, ENHANCEMENT MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	125 Cel
Maximum Power Dissipation Ambient:	.2 W
Minimum Power Gain (Gp):	16 dB
Maximum Feedback Capacitance (Crss):	.035 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	10 V
Maximum Drain Current (Abs) (ID):	.08 A

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