NEM091803S-28 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NEM091803S-28
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 388 W; Package Style (Meter): FLANGE MOUNT; Terminal Position: DUAL;
Datasheet	NEM091803S-28 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	10 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	4
Maximum Power Dissipation (Abs):	388 W
Terminal Position:	DUAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PDFM-F4
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	65 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	10 A

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