Renesas Electronics - RJH60F4DPQ-A0-T0

RJH60F4DPQ-A0-T0 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJH60F4DPQ-A0-T0
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 235.8 W; Maximum Collector Current (IC): 60 A; Package Shape: RECTANGULAR;
Datasheet RJH60F4DPQ-A0-T0 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 60 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 8 V
JEDEC-95 Code: TO-247
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 165 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 235.8 W
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: SINGLE
Nominal Turn On Time (ton): 195 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Case Connection: COLLECTOR
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