Renesas Electronics - RJP30H2DPK-M0-T2

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RJP30H2DPK-M0-T2 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJP30H2DPK-M0-T2
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 35 A; Maximum Collector-Emitter Voltage: 360 V; Maximum Gate-Emitter Voltage: 30 V;
Datasheet RJP30H2DPK-M0-T2 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 35 A
Maximum Power Dissipation (Abs): 60 W
Maximum Collector-Emitter Voltage: 360 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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