Renesas Electronics - RJP60F5DPM-00#T1

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RJP60F5DPM-00#T1 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJP60F5DPM-00#T1
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Maximum Collector Current (IC): 80 A; Maximum Gate-Emitter Voltage: 30 V; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet RJP60F5DPM-00#T1 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 80 A
Maximum Power Dissipation (Abs): 45 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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