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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | RJP65T43DPM-00#T1 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68.8 W; Maximum Collector Current (IC): 40 A; No. of Elements: 1; |
| Datasheet | RJP65T43DPM-00#T1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 40 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 7 V |
| Surface Mount: | NO |
| Nominal Turn Off Time (toff): | 165 ns |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 68.8 W |
| Terminal Position: | SINGLE |
| Nominal Turn On Time (ton): | 51 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | ISOLATED |
| Polarity or Channel Type: | N-CHANNEL |
| Maximum Collector-Emitter Voltage: | 650 V |
| Maximum Gate-Emitter Voltage: | 30 V |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 2.4 V |
