Renesas Electronics - UPA2724T1A-E2-AY

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UPA2724T1A-E2-AY by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number UPA2724T1A-E2-AY
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 170 A; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-F8;
Datasheet UPA2724T1A-E2-AY Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 84 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 29 A
Maximum Pulsed Drain Current (IDM): 170 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .005 ohm
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