ROHM - HP8K22TB

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HP8K22TB by ROHM

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Manufacturer ROHM
Manufacturer's Part Number HP8K22TB
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 6; Peak Reflow Temperature (C): 260; Maximum Drain Current (ID): 12 A;
Datasheet HP8K22TB Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 12 A
Maximum Pulsed Drain Current (IDM): 48 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN SOURCE
Maximum Drain-Source On Resistance: .0133 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 11.4 mJ
Other Names: HP8K22TBCT
HP8K22TBDKR
HP8K22TBTR
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Peak Reflow Temperature (C): 260
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