ROHM - RF4E075ATTCR

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RF4E075ATTCR by ROHM

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Manufacturer ROHM
Manufacturer's Part Number RF4E075ATTCR
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Drain Current (ID): 7.5 A; Package Body Material: PLASTIC/EPOXY;
Datasheet RF4E075ATTCR Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 10.6 mJ
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 7.5 A
Maximum Pulsed Drain Current (IDM): 30 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .0317 ohm
Moisture Sensitivity Level (MSL): 1
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