Samsung - SFP9624

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SFP9624 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number SFP9624
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38 W; JEDEC-95 Code: TO-220AB; Avalanche Energy Rating (EAS): 182 mJ;
Datasheet SFP9624 Datasheet
In Stock179
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 2.7 A
Maximum Pulsed Drain Current (IDM): 11 A
Sub-Category: Other Transistors
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 38 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 2.4 ohm
Avalanche Energy Rating (EAS): 182 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 250 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 2.7 A
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