SSW60N06 by Samsung | Transistors

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Manufacturer	Samsung
Manufacturer's Part Number	SSW60N06
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; Terminal Position: SINGLE; Maximum Drain-Source On Resistance: .018 ohm;
Datasheet	SSW60N06 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	60 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	190 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain Current (Abs) (ID):	60 A
Maximum Drain-Source On Resistance:	.018 ohm

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