SKIIP39AC126V2 by Semikron International | Transistors

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Manufacturer	Semikron International
Manufacturer's Part Number	SKIIP39AC126V2
Description	N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 157 A; Nominal Turn Off Time (toff): 600 ns; Maximum Gate-Emitter Voltage: 20 V;
Datasheet	SKIIP39AC126V2 Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	157 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Terminal Finish:	TIN/SILVER
Nominal Turn Off Time (toff):	600 ns
No. of Terminals:	68
Terminal Position:	UPPER
Nominal Turn On Time (ton):	120 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X68
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3/e4
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Reference Standard:	UL RECOGNIZED
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.1 V

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