STMicroelectronics - STB20N65M5

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STB20N65M5 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STB20N65M5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Maximum Pulsed Drain Current (IDM): 72 A; No. of Elements: 1;
Datasheet STB20N65M5 Datasheet
In Stock1,834
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 18 A
Maximum Pulsed Drain Current (IDM): 72 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 130 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .19 ohm
Avalanche Energy Rating (EAS): 270 mJ
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 650 V
Peak Reflow Temperature (C): NOT SPECIFIED
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