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Manufacturer | STMicroelectronics |
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Manufacturer's Part Number | STD12NM50NDTRL |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Avalanche Energy Rating (EAS): 350 mJ; Minimum DS Breakdown Voltage: 500 V; Maximum Drain Current (ID): 11 A; |
Datasheet | STD12NM50NDTRL Datasheet |
In Stock | 940 |
NAME | DESCRIPTION |
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Avalanche Energy Rating (EAS): | 350 mJ |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 11 A |
JEDEC-95 Code: | TO-252AA |
Maximum Pulsed Drain Current (IDM): | 44 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 2 |
Minimum DS Breakdown Voltage: | 500 V |
Qualification: | Not Qualified |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .38 ohm |