STMicroelectronics - STGB20M65DF2

  1. Home
  2. STMicroelectronics - STGB20M65DF2
STGB20M65DF2 by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number STGB20M65DF2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-263; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet STGB20M65DF2 Datasheet
In Stock3,865
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 40 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 7 V
Surface Mount: YES
Nominal Turn Off Time (toff): 252 ns
No. of Terminals: 2
Terminal Position: SINGLE
Nominal Turn On Time (ton): 39.6 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Other Names: STGB20M65DF2-ND
497-STGB20M65DF2TR
497-STGB20M65DF2DKR
497-STGB20M65DF2CT
JEDEC-95 Code: TO-263
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 650 V
Additional Features: BULK: 1000
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,865 $2.060 $7,961.900

Popular Products

Category Top Products

IRG7PH50K10D-EPBF by Infineon Technologies

IRG7PH50K10D-EPBF

Infineon Technologies

IRG7PH50K10D-EPBF by Infineon Technologies is an N-CHANNEL IGBT with tr of 80ns, tf of 110ns, and Pdiss of 400W. It operates at a max Vce of 1200V and max IC of 90A, suitable for high-power applications in industrial electronics and motor control systems.
CM600DY-24A by Mitsubishi Electric

CM600DY-24A

Mitsubishi Electric

Mitsubishi Electric's CM600DY-24A is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, each with a built-in diode. It has a max VCEsat of 3V and can handle up to 600A collector current. Ideal for power control applications requiring high power dissipation (3670W) and operating temperatures up to 150°C.
FGH60N60SMD-F085 by Onsemi

FGH60N60SMD-F085

Onsemi

FGH60N60SMD-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 600W Ptot. Ideal for power control applications due to its fast tr of 60ns and tf of 20ns. Its single configuration with built-in diode makes it suitable for high-power switching needs.
CM600DX-24T by Mitsubishi Electric

CM600DX-24T

Mitsubishi Electric

The Mitsubishi Electric CM600DX-24T is a N-CHANNEL IGBT with 2 elements, built-in diode and thermistor. It has a max VCEsat of 2.05V and can handle up to 600A collector current. Ideal for power control applications, it operates b/w -40 to 150 °C with UL recognition.
IGU04N60TAKMA1 by Infineon Technologies

IGU04N60TAKMA1

Infineon Technologies

IGU04N60TAKMA1 by Infineon is an N-CHANNEL IGBT with a 600V max collector-emitter voltage and 9.5A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 268ns and turn-on time of 24ns, it operates in temperatures as low as -40°C.
FGH40N60SMD-F085 by Onsemi

FGH40N60SMD-F085

Onsemi

FGH40N60SMD-F085 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and max power dissipation of 349W. Ideal for power control applications, it features a single configuration with built-in diode and operates at temperatures up to 175°C.
IRGP4650D-EPBF by Infineon Technologies

IRGP4650D-EPBF

Infineon Technologies

IRGP4650D-EPBF by Infineon Technologies is an N-CHANNEL IGBT with 42ns rise time, 54ns fall time, and 268W power dissipation. It operates at a max temp of 175°C and has a collector-emitter voltage of 600V. Ideal for high-power applications requiring fast switching capabilities.
APT50GR120JD30 by Microsemi

APT50GR120JD30

Microsemi

Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 417 W; Maximum Collector Current (IC): 84 A; Maximum Collector-Emitter Voltage: 1200 V; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
IXGH16N170A by Littelfuse

IXGH16N170A

Littelfuse

The Littelfuse IXGH16N170A is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1700V and a max collector current of 16A. It has a nominal turn-off time of 330ns, making it ideal for motor control applications requiring high power dissipation up to 190W. The package style is flange mount with a rectangular shape and through-hole terminals.
APT200GN60J by Microsemi

APT200GN60J

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 682 W; Maximum Collector Current (IC): 250 A; Terminal Position: UPPER;
FGH60N60SFTU by Onsemi

FGH60N60SFTU

Onsemi

FGH60N60SFTU by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max power dissipation of 378W. It has a nominal turn-off time of 187ns, making it ideal for power control applications requiring fast switching speeds. The package style is flange mount with through-hole terminals, suitable for high-power applications in industrial settings.
APT30GP60BDQ1G by Advanced Power Technology

APT30GP60BDQ1G

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Package Shape: RECTANGULAR; JESD-30 Code: R-PSFM-T3;
STGB3NC120HDT4 by STMicroelectronics

STGB3NC120HDT4

STMicroelectronics

STGB3NC120HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 14A IC, and 680ns toff. Ideal for power control applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount assembly.
IXGH6N170 by IXYS Corporation

IXGH6N170

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 12 A; Maximum Gate-Emitter Voltage: 20 V;
IXYN100N120C3H1 by IXYS Corporation

IXYN100N120C3H1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 690 W; Maximum Collector Current (IC): 134 A; Terminal Position: UPPER;
IRGP4063DPBF by International Rectifier

IRGP4063DPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 330 W; Maximum Collector Current (IC): 96 A; Case Connection: COLLECTOR;
FF300R12KT4HOSA1 by Infineon Technologies

FF300R12KT4HOSA1

Infineon Technologies

FF300R12KT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a max voltage of 1200V, and a max current of 450A. It has a nominal turn-off time of 720ns and turn-on time of 230ns. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.
HGTD1N120BNS9A by Intersil

HGTD1N120BNS9A

Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 5.3 A; Transistor Element Material: SILICON;
STGP15M120F3 by STMicroelectronics

STGP15M120F3

STMicroelectronics

STGP15M120F3 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector-emitter voltage of 1200V. It is used for power control applications, offering a nominal turn off time of 406ns and a max collector current of 30A.
FF450R17ME4B11BOSA1 by Infineon Technologies

FF450R17ME4B11BOSA1

Infineon Technologies

Infineon Technologies' FF450R17ME4B11BOSA1 is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.3V and IC of 600A. Operates at -40 to 150 °C, featuring a max VCE of 1700V and Pmax of 2500W in a rectangular package style.