STMicroelectronics - STGE50NC60WD

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STGE50NC60WD by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGE50NC60WD
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 100 A; Qualification: Not Qualified;
Datasheet STGE50NC60WD Datasheet
In Stock1,984
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 100 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 343 ns
No. of Terminals: 4
Maximum Power Dissipation (Abs): 260 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 69 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.6 V
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