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Manufacturer | STMicroelectronics |
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Manufacturer's Part Number | STL38DN6F7AG |
Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57.7 W; Reference Standard: AEC-Q101; Maximum Operating Temperature: 175 Cel; |
Datasheet | STL38DN6F7AG Datasheet |
In Stock | 2,050 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 10 A |
Maximum Pulsed Drain Current (IDM): | 40 A |
Surface Mount: | YES |
No. of Terminals: | 8 |
Maximum Power Dissipation (Abs): | 57.7 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-F8 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .027 ohm |
Avalanche Energy Rating (EAS): | 50 mJ |
Maximum Feedback Capacitance (Crss): | 7.9 pF |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 60 V |
Additional Features: | BULK: 3000 |
Reference Standard: | AEC-Q101 |
Peak Reflow Temperature (C): | NOT SPECIFIED |