STMicroelectronics - STL70N10F3

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STL70N10F3 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STL70N10F3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
Datasheet STL70N10F3 Datasheet
In Stock155
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 58 A
Maximum Pulsed Drain Current (IDM): 64 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
No. of Terminals: 5
Maximum Power Dissipation (Abs): 136 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0084 ohm
Avalanche Energy Rating (EAS): 770 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Maximum Drain Current (Abs) (ID): 82 A
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