STMicroelectronics - STL7NM60N

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STL7NM60N by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STL7NM60N
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; Maximum Pulsed Drain Current (IDM): 5.6 A; Transistor Element Material: SILICON;
Datasheet STL7NM60N Datasheet
In Stock751
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5.8 A
Maximum Pulsed Drain Current (IDM): 5.6 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
No. of Terminals: 5
Maximum Power Dissipation (Abs): 68 W
Terminal Position: QUAD
Package Style (Meter): CHIP CARRIER
JESD-30 Code: S-PQCC-N5
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .9 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 119 mJ
Other Names: 497-11043-1
497-11043-2
497-11043-6
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 600 V
Maximum Drain Current (Abs) (ID): 5.8 A
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