STMicroelectronics - STN1NF20

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STN1NF20 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STN1NF20
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; JESD-609 Code: e3; Transistor Application: SWITCHING;
Datasheet STN1NF20 Datasheet
In Stock26,014
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1 A
Maximum Pulsed Drain Current (IDM): 4 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 1.5 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 70 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 200 V
Peak Reflow Temperature (C): 260
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