STMicroelectronics - STS2DPF80

STS2DPF80 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STS2DPF80
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; No. of Terminals: 8; Package Shape: RECTANGULAR;
Datasheet STS2DPF80 Datasheet
In Stock1,146
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2 A
Maximum Pulsed Drain Current (IDM): 8 A
Sub-Category: Other Transistors
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .25 ohm
Other Names: STS2DPF80-ND
-497-8040-1
-497-8040-2
497-8040-6
-497-8040-6
497-8040-2
497-8040-1
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 80 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 2 A
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