STU6N60M2 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STU6N60M2
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; No. of Terminals: 3; JESD-609 Code: e3;
Datasheet	STU6N60M2 Datasheet
In Stock	1,606

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	4.5 A
Maximum Pulsed Drain Current (IDM):	18 A
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	60 W
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	1.2 ohm
Avalanche Energy Rating (EAS):	86 mJ
Maximum Feedback Capacitance (Crss):	.7 pF
JEDEC-95 Code:	TO-251
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	600 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,606	$0.480	$770.880

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