STMicroelectronics - STW62N65M5

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STW62N65M5 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STW62N65M5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Avalanche Energy Rating (EAS): 1400 mJ; Terminal Position: SINGLE;
Datasheet STW62N65M5 Datasheet
In Stock369
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 46 A
Maximum Pulsed Drain Current (IDM): 184 A
Surface Mount: NO
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .049 ohm
Avalanche Energy Rating (EAS): 1400 mJ
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 650 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
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