STZ150NF55T by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STZ150NF55T
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): 40 A;
Datasheet	STZ150NF55T Datasheet
In Stock	4,340

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	40 A
Maximum Pulsed Drain Current (IDM):	160 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	55 V
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	250 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain Current (Abs) (ID):	40 A
Maximum Drain-Source On Resistance:	.009 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,340	-	-

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;

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D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; No. of Rows Loaded: 2; Shell Size: 1/E; Filter Feature: NO;

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