Texas Instruments - CSD19506KCS

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CSD19506KCS by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number CSD19506KCS
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Drain Current (Abs) (ID): 100 A; Maximum Drain-Source On Resistance: .0028 ohm;
Datasheet CSD19506KCS Datasheet
In Stock3,559
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 100 A
Maximum Pulsed Drain Current (IDM): 236 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 375 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0028 ohm
Avalanche Energy Rating (EAS): 832 mJ
Maximum Feedback Capacitance (Crss): 55 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 80 V
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 100 A
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