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Manufacturer | Toshiba |
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Manufacturer's Part Number | 2SK1358 |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Case Connection: DRAIN; Maximum Drain-Source On Resistance: 1.4 ohm; Maximum Power Dissipation Ambient: 150 W; |
Datasheet | 2SK1358 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 9 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
Terminal Finish: | TIN LEAD |
JESD-609 Code: | e0 |
No. of Terminals: | 3 |
Minimum DS Breakdown Voltage: | 900 V |
Qualification: | Not Qualified |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Case Connection: | DRAIN |
Maximum Power Dissipation Ambient: | 150 W |
Maximum Drain-Source On Resistance: | 1.4 ohm |