GT30J324(Q) by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	GT30J324(Q)
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Collector Current (IC): 30 A; Maximum Gate-Emitter Voltage: 20 V;
Datasheet	GT30J324(Q) Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	30 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Nominal Turn Off Time (toff):	430 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	170 W
Maximum Collector-Emitter Voltage:	600 V
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	240 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	COLLECTOR
Maximum VCEsat:	2.45 V

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