Toshiba - GT60J323H(Q)

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GT60J323H(Q) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number GT60J323H(Q)
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Voltage: 25 V; Maximum Operating Temperature: 150 Cel;
Datasheet GT60J323H(Q) Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 60 A
Maximum Power Dissipation (Abs): 170 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 25 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Maximum Fall Time (tf): 210 ns
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