Toshiba - GT8G121(SM)

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GT8G121(SM) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number GT8G121(SM)
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A; Maximum Gate-Emitter Voltage: 6 V; Maximum Operating Temperature: 150 Cel;
Datasheet GT8G121(SM) Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 8 A
Maximum Power Dissipation (Abs): 20 W
Maximum Collector-Emitter Voltage: 400 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 6 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
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