Toshiba - GT8G133

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GT8G133 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number GT8G133
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Maximum Gate-Emitter Voltage: 6 V; No. of Terminals: 8;
Datasheet GT8G133 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 1.4 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Nominal Turn Off Time (toff): 2000 ns
No. of Terminals: 8
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 1.1 W
Maximum Collector-Emitter Voltage: 400 V
Terminal Position: DUAL
Nominal Turn On Time (ton): 1700 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 6 V
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