Toshiba - HN3C01FTE85R

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HN3C01FTE85R by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number HN3C01FTE85R
Description NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 1400 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;
Datasheet HN3C01FTE85R Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 1400 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .05 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 40
No. of Terminals: 6
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Operating Temperature: 125 Cel
Maximum Collector-Base Capacitance: .53 pF
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