Toshiba - MG30J6ES11

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MG30J6ES11 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MG30J6ES11
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Maximum Collector Current (IC): 30 A; No. of Elements: 6; Qualification: Not Qualified; Transistor Element Material: SILICON;
Datasheet MG30J6ES11 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 30 A
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
No. of Elements: 6
Polarity or Channel Type: N-CHANNEL
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