Toshiba - MG400Q2YS70A

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MG400Q2YS70A by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MG400Q2YS70A
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 3750 W; Maximum Collector Current (IC): 400 A; Maximum Operating Temperature: 100 Cel; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet MG400Q2YS70A Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 400 A
Maximum Power Dissipation (Abs): 3750 W
Maximum Collector-Emitter Voltage: 1200 V
No. of Elements: 1
Maximum Operating Temperature: 100 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.7 V
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