Toshiba - MIG10J503H

MIG10J503H by Toshiba

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Manufacturer	Toshiba
Manufacturer's Part Number	MIG10J503H
Description	Insulated Gate Bipolar Transistors; Maximum Collector Current (IC): 10 A; Maximum VCEsat: 2.3 V; No. of Elements: 1; Maximum Collector-Emitter Voltage: 600 V; Maximum Operating Temperature: 100 Cel;
Datasheet	MIG10J503H Datasheet

MIG10J503H Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	10 A
Maximum Collector-Emitter Voltage:	600 V
No. of Elements:	1
Maximum Operating Temperature:	100 Cel
Sub-Category:	Insulated Gate BIP Transistors
Maximum VCEsat:	2.3 V

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