Toshiba - TGI7179-130LHA

  1. Home
  2. Toshiba - TGI7179-130LHA
TGI7179-130LHA by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TGI7179-130LHA
Description RF Power Field-Effect Transistors;
Datasheet TGI7179-130LHA Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

A2T18S261W12NR3 by NXP Semiconductors

A2T18S261W12NR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Terminal Finish: TIN;
PD57006S by STMicroelectronics

PD57006S

STMicroelectronics

PD57006S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology for efficient integration.
PTVA101K02EVV1R250 by Infineon Technologies

PTVA101K02EVV1R250

Infineon Technologies

Infineon's PTVA101K02EVV1R250 is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage, 17dB Power Gain, and L BAND frequency. It's a COMMON SOURCE transistor for AMPLIFIER applications in ENHANCEMENT MODE. The package is CERAMIC/METAL-SEALED COFIRED, RECTANGULAR shape, FLANGE MOUNT style with 4 terminals and max temp of 225°C.
PD54008L by STMicroelectronics

PD54008L

STMicroelectronics

PD54008L by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This surface-mount device excels in high-power scenarios with a dissipation of up to 44 W.
D2002UK by Tt Electronics Plc

D2002UK

Tt Electronics Plc

D2002UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. This METAL-OXIDE SEMICONDUCTOR FET has a max ID of 2A and can withstand temperatures up to 200°C.
MRF8P29300HR6 by NXP Semiconductors

MRF8P29300HR6

NXP Semiconductors

NXP Semiconductors' MRF8P29300HR6 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the S BAND, featuring COMMON SOURCE configuration for AMPLIFIER applications. This METAL-OXIDE SEMICONDUCTOR technology has a max temp of 225°C and comes in a FLANGE MOUNT package style.
MRFE6VP100HR5 by NXP Semiconductors

MRFE6VP100HR5

NXP Semiconductors

N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
A5G38H045N by NXP Semiconductors

A5G38H045N

NXP Semiconductors

RF Power Field-Effect Transistors;
FLL120MK by Eudyna Devices

FLL120MK

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Transistor Application: AMPLIFIER; No. of Terminals: 2;
PD57070STR-E by STMicroelectronics

PD57070STR-E

STMicroelectronics

PD57070STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology with a max power dissipation of 95 W.
A3T23H450W23SR6 by NXP Semiconductors

A3T23H450W23SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
MRF8P29300HR6 by Freescale Semiconductor

MRF8P29300HR6

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
PD85025C by STMicroelectronics

PD85025C

STMicroelectronics

PD85025C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
AFT09MS031NR1 by Freescale Semiconductor

AFT09MS031NR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 317 W; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Operating Temperature: 150 Cel;
MRF151 by New Jersey Semiconductor Products

MRF151

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (Abs) (ID): 16 A; Maximum Drain-Source On Resistance: .5 ohm;
A5G35S004NT6 by NXP Semiconductors

A5G35S004NT6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
PD55015 by STMicroelectronics

PD55015

STMicroelectronics

PD55015 by STMicroelectronics is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY, with a max drain current of 5A and power dissipation of 73W. The transistor has a PLASTIC/EPOXY body, GULL WING terminals, and can withstand up to 165°C operating temperature.
BLP15H9S100GZ by Ampleon Netherlands B V

BLP15H9S100GZ

Ampleon Netherlands B V

BLP15H9S100GZ by Ampleon Netherlands B V is an N-CHANNEL RF FET with 106V DS Breakdown Voltage and 18dB Power Gain, ideal for AMPLIFIER applications in L BAND. It features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR tech, and operates in ENHANCEMENT MODE up to 225°C.
934064627118 by NXP Semiconductors

934064627118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFM-F2; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
BLF177 by NXP Semiconductors

BLF177

NXP Semiconductors

BLF177 by NXP Semiconductors is a single N-channel RF Power FET with 125V DS breakdown voltage, suitable for amplifier applications in the VHF band. It features a max drain current of 16A, power dissipation of 220W, and operates in enhancement mode. The package is ceramic-metal sealed co-fired with flange mount style and radial terminal position.