Image shown is a representation only.
| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | TJ11A10M3 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 24 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: THROUGH-HOLE; |
| Datasheet | TJ11A10M3 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 11 A |
| Maximum Pulsed Drain Current (IDM): | 22 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 24 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Maximum Drain-Source On Resistance: | .13 ohm |
| Avalanche Energy Rating (EAS): | 37 mJ |
| JEDEC-95 Code: | TO-220AB |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum DS Breakdown Voltage: | 100 V |
| Maximum Drain Current (Abs) (ID): | 11 A |
